Continuous four probe resistance and optical film thickness measurement equipmentDesign, chip resistance not affected by needle tip distance, multiple models to choose from:
Automatic cassette to cassette (C2C)
Measurement from room temperature to 100 ° C (higher optional)
Can be added and integrated into multi cavity cluster tools

Four probe resistance and optical film thickness measurement can also be added to continuous devices, suitable for thin-film solar energy (copper indium gallium selenide, CIGS) and flat panel display industries

Substrate size:
450mm wafer (sample stage rotation)
370 x 470mm rectangular base (XY sample stage)
Continuous equipment can be customized without size restrictions
Chip resistance measurement is suitable for metal thin films, copper indium gallium selenide, amorphous silicon (silicon), cadmium telluride, molybdenum, transparent conductive thin films (AlZnO2), doped silicon (silicon), silicon germanium, and germanium
0.1-100000 Om value per unit area (higher optional)

Can be integrated into a continuous (INLINE) production line, and the collected measurement data can be automatically sent to the SCADA system
Optical film thickness measurement function optional
Measurement spot<1mm
Wavelength: 380-1050nm
Measurable film thickness: 15-50nm, up to 250nm
Short term repeatability:~0.1nm
Long term repeatability:~0.1nm